Open Science Harvester of NAS of Ukraine

Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers

by Stronski, A.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Optical properties of Ge-As-S thin films

by Tolmachov, I.D., Stronski, A.V.
Published in Functional Materials (2009)

Photoinduced structural changes in As₁₀₀₋xSx layers

by Stronski, A., Vlcek, M., Sklenar, A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Optical properties and structure of As-Ge-Se thin films

by Tolmachov, I.D., Stronski, A.V., Vlcek, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Fourier Raman spectroscopy studies of the As₄₀S₆₀-xSex glasses

by Stronski, A.V., Vlček, M., Oleksenko, P.F.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-b...

by Moskvin, P.P., Rashkovetskiy, L.V., Stronski, A.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy

by Vlasenko, O.I., Gentsar, P.O., Stronski, A.V.
Published in Functional Materials (2009)

Вплив імпульсного лазерного опромінення (довжина електромагнітної хвилі 266 нм) на оптичні властивості CdTe та Cd0,9Zn0,1Te в області фундаментального оптичного переходу E0...

by Gentsar, P.O., Levytskyi, S.M., Stronski, A.V.
Published 2021

Investigation of nanophase separation in IR optical glasses As₄₀Se₆₀ using resonant Raman scattering

by Mateleshko, N., Mitsa, V., Veres, M., Koos, M., Stronski, A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Raman scattering in sulphide glasses

by Tolmachov, I.D., Stronski, A.V., Pribylova, H., Vlček, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

by Mateleshko, N., Mitsa, V., Stronski, A., Veres, M., Koos, M., Andriesh, A.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Raman spectra of Ag- and Cu- photodoped chalcogenide films

by Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication

by Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Photoluminescence of As₂S₃ doped with Cr and Yb

by Stronski, A.V., Paiuk, O.P., Strelchuk, V.V., Nasieka, Iu.M., Vlček, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Optical properties of quantum-sized structures and two-dimensional photon crystals fabricated in semiconductor substrates using irreversible giant modification

by Kamuz, A.M., Oleksenko, P.F., Kamuz, O.A., Ilin, O.A., Stronski, A.V.
Published in Functional Materials (2008)

Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering

by Zayats, M.S., Boiko, V.G., Gentsar, P.O., Vuichyk, M.V., Lytvyn, O.S., Stronski, A.V.
Published in Functional Materials (2010)

Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals

by Paiuk, A.P., Stronski, A.V., Vuichyk, N.V., Gubanova, A.A., Krys’kov, Ts.A., Oleksenko, P.F.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Structural properties of chalcogenide glasses As₂Se₃ doped with manganese

by Paiuk, O.P., Revutska, L.O., Stronski, A.V., Gudymenko, A.Yo., Stanchu, H.V., Gubanova, A.A., Kryskov, Ts.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

by Stronski, A.V., Vlcek, M., Kostyukevych, S.A., Tomchuk, V.M., Kostyukevych, E.V., Svechnikov, S.V., Kudryavtsev, A.A., Moskalenko, N.L., Koptyukh, A.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)