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  • Sudarshan, T.S.
Showing 1 - 2 results of 2 for search 'Sudarshan, T.S.', query time: 0.00s Refine Results
  1. 1
    Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
    Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
    by Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
    Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)
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  2. 2
    SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
    SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
    by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
    Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)
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