Харвестер відкритої науки НАН України

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)