Харвестер відкритої науки НАН України

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

за авторством Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Development of high-stable contact systems to gallium nitride microwave diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)