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Sveshnikov, Yu.N.
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Sveshnikov, Yu.N.
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Sveshnikov, Yu.N.
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Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by
Boltovets, M.S.
,
Ivanov, V.M.
,
Konakova, R.V.
,
Kudryk, Ya.Ya.
,
Milenin, V.V.
,
Shynkarenko, V.V.
,
Sheremet, V.M.
,
Sveshnikov, Yu.N.
,
Yavich, B.S.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2010)
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Select result number 2
2
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by
Belyaev, A.E.
,
Boltovets, N.S.
,
Ivanov, V.N.
,
Klad’ko, V.P.
,
Konakova, R.V.
,
Kudryk, Ya.Ya.
,
Kuchuk, A.V.
,
Milenin, V.V.
,
Sveshnikov, Yu.N.
,
Sheremet, V.N.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2007)
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3
Development of high-stable contact systems to gallium nitride microwave diodes
by
Belyaev, A.E.
,
Boltovets, N.S.
,
Ivanov, V.N.
,
Kapitanchuk, L.M.
,
Kladko, V.P.
,
Konakova, R.V.
,
Kudryk, Ya.Ya.
,
Kuchuk, A.V.
,
Lytvyn, O.S.
,
Milenin, V.V.
,
Sheremet, V.N.
,
Sveshnikov, Yu.N.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2007)
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