Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118559
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ.

We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with circular contact geometry. The Ti−Al−TiBx−Au contact metallization to n-GaN ret...