Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field

за авторством Kazantseva, Z., Kislyuk, V., Kozyarevych, I., Lozovski, V., Tretyak, O.
Опубліковано 2005

Synthesis of charged silica films of porous structure

за авторством Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.
Опубліковано 2008

Spin-dependent current in silicon p-n junction diodes

за авторством Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.
Опубліковано 2010

Self-consistent model of strong coupling theory of electron correlations in disordered crystals

за авторством Repetsky, S.P., Tretyak, O.V., Vyshivanaya, I.G., Shastun, V.V.
Опубліковано 2012

Effect of pressure on intersystem transitions in aromatic amine molecules

за авторством Skrishevsky, Yu.A., Vakhnin, A.Yu., Skrishevsky, V.A., Gavrilchenko, I.V., Tretyak, O.V.
Опубліковано 2006

RADIOACTIVE CONTAMINATION OF GROUNDWATER AT WASTE DUMP SITES IN CHERNOBYL EXCLUSION ZONE

за авторством Bugai, D. О., Bayer, P., Haneke, K., Sizov, A., Tretyak, O., Kubko, Yu., Kireev, S., Molitor, N.
Опубліковано 2020

Electrical properties of MIS structures with silicon nanoclusters

за авторством Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.
Опубліковано 2011

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

за авторством Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
Опубліковано 2010