Харвестер відкритої науки НАН України

Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field

за авторством Kazantseva, Z., Kislyuk, V., Kozyarevych, I., Lozovski, V., Tretyak, O.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Spin-dependent current in silicon p-n junction diodes

за авторством Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Synthesis of charged silica films of porous structure

за авторством Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.
Опубліковано в: Functional Materials (2008)

Self-consistent model of strong coupling theory of electron correlations in disordered crystals

за авторством Repetsky, S.P., Tretyak, O.V., Vyshivanaya, I.G., Shastun, V.V.
Опубліковано в: Успехи физики металлов (2012)

Effect of pressure on intersystem transitions in aromatic amine molecules

за авторством Skrishevsky, Yu.A., Vakhnin, A.Yu., Skrishevsky, V.A., Gavrilchenko, I.V., Tretyak, O.V.
Опубліковано в: Functional Materials (2006)

Electrical properties of MIS structures with silicon nanoclusters

за авторством Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

за авторством Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)