Spin-dependent current in silicon p-n junction diodes von Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.

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Synthesis of charged silica films of porous structure von Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.

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Aвтоматизированный спектрометр глубоких уровней для исследования полупроводниковых структур von Boiko, Yu. V., Kuznetsov, G. V., Savitsky, S. М., Tretyak, O. V.

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Self-consistent model of strong coupling theory of electron correlations in disordered crystals von Repetsky, S.P., Tretyak, O.V., Vyshivanaya, I.G., Shastun, V.V.

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Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 von Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.

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