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Methods and mechanisms of gettering of silicon structures in the production of integrated circuits за авторством V. A. Pilipenko, V. A. Gorushko, A. N. Petlitskij, V. V. Ponarjadov, A. S. Turtsevich, S. V. Shvedov

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Role of dislocations in formation of ohmic contacts to heavily doped n-Si за авторством A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes за авторством P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step за авторством A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

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