Formation of rectifying contact in semiconductor–vacuum–metal system

за авторством L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Опубліковано 2011

Impact of atomic structure of metal surface on potential relief of closely located surface of semiconductor

за авторством L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Опубліковано 2011

Efect of metal on the surface characteristics of semiconductor

за авторством L. H. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Опубліковано 2011

Algorithms for Separating the Sum of Vibrations and Identifying their Sources

за авторством V .A. Zelinsky, S. V. Lusochenko, V.V. Ilchenko, Yu. L. Sheredeko
Опубліковано 2022

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films

за авторством V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko
Опубліковано 2016

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films

за авторством V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko
Опубліковано 2016

Determination of Vibration Object' Coordinate on Surface of Earth

за авторством V. A. Zelinsky, S. V. Lysochenko, V. V. Ilchenko, M. M. Nikiforov, O. L. Kulsky, V. V. Krichta
Опубліковано 2022

Electrical properties of MIS structures with silicon nanoclusters

за авторством S. V. Bunak, V. V. Ilchenko, V. P. Melnik, I. M. Hatsevych, B. N. Romanyuk, A. G. Shkavro, O. V. Tretyak
Опубліковано 2011

Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

за авторством S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro
Опубліковано 2010