Formation of rectifying contact in semiconductor–vacuum–metal system за авторством L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov

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Impact of atomic structure of metal surface on potential relief of closely located surface of semiconductor за авторством L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov

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Efect of metal on the surface characteristics of semiconductor за авторством L. H. Ilchenko, V. V. Ilchenko, V. V. Lobanov

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Algorithms for Separating the Sum of Vibrations and Identifying their Sources за авторством V .A. Zelinsky, S. V. Lusochenko, V.V. Ilchenko, Yu. L. Sheredeko

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Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films за авторством V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko

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Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films за авторством V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko

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Determination of Vibration Object' Coordinate on Surface of Earth за авторством V. A. Zelinsky, S. V. Lysochenko, V. V. Ilchenko, M. M. Nikiforov, O. L. Kulsky, V. V. Krichta

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Electrical properties of MIS structures with silicon nanoclusters за авторством S. V. Bunak, V. V. Ilchenko, V. P. Melnik, I. M. Hatsevych, B. N. Romanyuk, A. G. Shkavro, O. V. Tretyak

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Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 за авторством S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro

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