Formation of rectifying contact in semiconductor–vacuum–metal system

von L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Veröffentlicht 2011

Impact of atomic structure of metal surface on potential relief of closely located surface of semiconductor

von L. G. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Veröffentlicht 2011

Efect of metal on the surface characteristics of semiconductor

von L. H. Ilchenko, V. V. Ilchenko, V. V. Lobanov
Veröffentlicht 2011

Algorithms for Separating the Sum of Vibrations and Identifying their Sources

von V .A. Zelinsky, S. V. Lusochenko, V.V. Ilchenko, Yu. L. Sheredeko
Veröffentlicht 2022

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films

von V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko
Veröffentlicht 2016

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films

von V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko
Veröffentlicht 2016

Determination of Vibration Object' Coordinate on Surface of Earth

von V. A. Zelinsky, S. V. Lysochenko, V. V. Ilchenko, M. M. Nikiforov, O. L. Kulsky, V. V. Krichta
Veröffentlicht 2022

Electrical properties of MIS structures with silicon nanoclusters

von S. V. Bunak, V. V. Ilchenko, V. P. Melnik, I. M. Hatsevych, B. N. Romanyuk, A. G. Shkavro, O. V. Tretyak
Veröffentlicht 2011

Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

von S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro
Veröffentlicht 2010