Reliability of AC thick-film electroluminescent lamps von Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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3C-6H transformation in heated cubic silicon carbide 3C-SiC von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Flexible electroluminescent panels von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

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Boron, aluminum, nitrogen, oxygen impurities in silicon carbide von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Nanograin boundaries and silicon carbide photoluminescence von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Silicon carbide phase transition in as-grown 3C-6H polytypes junction von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.

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Silicon carbide defects and luminescence centers in current heated 6H-SiC von Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.

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