Schottky-barrier Au–TiBx–n-GaN contacts von Ya. Kudryk

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Methods for creation and properties of ohmic contacts to indium phosphide (rewiev) von Ya. Ya. Kudryk

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Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes von Ya. Ya. Kudryk, V. S. Slipokurov

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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics von Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, Ya. Kudryk

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Degradation processes in LED modules von V. M. Sorokin, Ya. Ya. Kudryk, V. V. Shynkarenko, Ya. Kudryk, P. O. Sai

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Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs von V. M. Sorokin, R. V. Konakova, Ya. Ya. Kudryk, A. V. Zinovchuk, R. I. Bigun, Ya. Kudryk, V. V. Shynkarenko

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Development and investigation of microwave radiation sources and detector sections using SBDs within the 220-400 GHz frequency range von A. V. Zorenko, Ya. Ya. Kudryk, Yu. V. Marunenko

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors von V. S. Slipokurov, M. N. Dub, A. K. Tkachenko, Ya. Ya. Kudryk

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Hybrid-integrated version of solid-state components for terahertz frequency region von O. V. Zorenko, A. V. Bychok, T. V. Krytska, Ya. Ya. Kudryk, V. V. Shynkarenko

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Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range von A. V. Zorenko, A. V. Bychok, V. V. Shynkarenko, Ya. Ya. Kudryk, V. S. Slipokurov

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Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes von P. M. Romanets, R. V. Konakova, M. S. Boltovets, V. V. Basanets, Ya. Ya. Kudryk, V. S. Slipokurov

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Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko, V. N. Sheremet

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A subharmonic mixer for the 220-325 GHz frequency range von A. V. Zorenko, N. V. Kolesnik, T. V. Kritskaya, Ya. Ya. Kudryk, Yu. V. Marunenko, L. P. Ryzhanovich

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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, V. M. Sorokin, V. N. Sheremet, V. V. Shynkarenko

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Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity von M. S. Boltovets, V. M. Ivanov, R. V. Konakova, Ya. Ya. Kudryk, V. V. Milenin, V. V. Shynkarenko, V. M. Sheremet, Yu. N. Sveshnikov, B. S. Yavich

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Method for data processing in application to ohmic contacts von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. M. Kovtonjuk, Ya. Ya. Kudryk, V. V. Shynkarenko, M. M. Dub, P. O. Saj, S. V. Novitskii

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP von A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova

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Ohmic contacts based on Pd to indium phosphide Gunn diodes von A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, A. V. Zorenko, I. N. Arsentiev, V. P. Kladko, V. M. Kovtonyuk, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

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