About ultrasound-stimulated a self-organization of defect structures in semiconductors during ion implantation за авторством Ya. M. Olikh

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading за авторством Ya. M. Olikh, M. D. Tymochko

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading за авторством Ya. M. Olikh, M. D. Tymochko

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Relaxation factors of acoustic conductivity in CdTe за авторством Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals за авторством I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, G. V. Beketov

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals за авторством I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, H. V. Beketov

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nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals за авторством Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh

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Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN за авторством Ya. M. Olikh, M. D. Tymochko, V. P. Kladko, O. I. Liubchenko, Ye. Bieliaiev, V. V. Kaliuzhnyi

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity за авторством O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons за авторством R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk

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