About ultrasound-stimulated a self-organization of defect structures in semiconductors during ion implantation von Ya. M. Olikh

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading von Ya. M. Olikh, M. D. Tymochko

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading von Ya. M. Olikh, M. D. Tymochko

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Relaxation factors of acoustic conductivity in CdTe von Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals von I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, G. V. Beketov

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals von I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, H. V. Beketov

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nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals von Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh

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Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN von Ya. M. Olikh, M. D. Tymochko, V. P. Kladko, O. I. Liubchenko, Ye. Bieliaiev, V. V. Kaliuzhnyi

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk

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