Харвестер відкритої науки НАН України

About ultrasound-stimulated a self-organization of defect structures in semiconductors during ion implantation

von Ya. M. Olikh
Veröffentlicht 2013

Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading

von Ya. M. Olikh, M. D. Tymochko
Veröffentlicht 2016

Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading

von Ya. M. Olikh, M. D. Tymochko
Veröffentlicht 2016

Relaxation factors of acoustic conductivity in CdTe

von Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk
Veröffentlicht 2018

Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals

von I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, H. V. Beketov
Veröffentlicht 2014

Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals

von I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, G. V. Beketov
Veröffentlicht 2014

nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals

von Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh
Veröffentlicht 2017

Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN

von Ya. M. Olikh, M. D. Tymochko, V. P. Kladko, O. I. Liubchenko, Ye. Bieliaiev, V. V. Kaliuzhnyi
Veröffentlicht 2021

Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity

von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Veröffentlicht 2016

Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons

von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk
Veröffentlicht 2020