About ultrasound-stimulated a self-organization of defect structures in semiconductors during ion implantation by Ya. M. Olikh

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading by Ya. M. Olikh, M. D. Tymochko

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Peculiarities of current flow in strongly compensated low-resistance CdTe:Cl crystals under ultrasonic loading by Ya. M. Olikh, M. D. Tymochko

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Relaxation factors of acoustic conductivity in CdTe by Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals by I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, G. V. Beketov

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Features of ultrasound absorption by dislocations in subgrain-free Cs0.2Hg0.8Te crystals by I. O. Lysiuk, Ya. M. Olikh, Ya. Olikh, H. V. Beketov

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nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals by Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh

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Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN by Ya. M. Olikh, M. D. Tymochko, V. P. Kladko, O. I. Liubchenko, Ye. Bieliaiev, V. V. Kaliuzhnyi

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity by O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons by R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk

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