The Study of Amorphous Chalcogenide Materials of Memory Elements Based on Phase Transitions
A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is s...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
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Інститут проблем реєстрації інформації НАН України
2014
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| Online Zugang: | http://drsp.ipri.kiev.ua/article/view/100252 |
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| Назва журналу: | Data Recording, Storage & Processing |