Preparation methods for nano-sized structures using films of chalcogenide glassy semiconductors

Preparation methods for nano-sized structures using films of chalcogenide glassy semiconductors

The analysis of methods of micro- and nanorelief structures recording at chalcogenide vitreous semiconductors films is presented. It is shown that exposing of the chalcogenide vitreous semiconductors films by optical radiation focused by diffraction limited optical systems allows to obtain prints wi...

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Bibliographische Detailangaben
Datum:2016
Hauptverfasser: Petrov, V. V., Lytvyn, P. M., Trunov, M. L., Kryuchyn, A. A., Belyak, E. V., Rubish, V. M., Kostyukevych, S. O., Koptiukh, A. A.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: Інститут проблем реєстрації інформації НАН України 2016
Schlagworte:
nanorelief structures
chalcogenide vitreous semiconductors
near-field probes
AFM lithography
Online Zugang:http://drsp.ipri.kiev.ua/article/view/100341
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Назва журналу:Data Recording, Storage & Processing

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Data Recording, Storage & Processing
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Zusammenfassung:The analysis of methods of micro- and nanorelief structures recording at chalcogenide vitreous semiconductors films is presented. It is shown that exposing of the chalcogenide vitreous semiconductors films by optical radiation focused by diffraction limited optical systems allows to obtain prints with much smaller size than the diffraction boundary by using of the photosensitive materials exposure characte-ristics nonlinearity. The data of the recording nanosize structures by near field and electron beam systems are revealed. Fig.: 6. Refs: 28 titles.

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