Structural and morphological properties of annealed films of the As2S3-Sb2S3-SbI3 system

• Datum: 2023
• Hauptverfasser: Грещук, О. М., Дуркот, М. О., Л. І. Макар, Л. І., Мудрий, С. І., Рубіш, В. М., Трикур, І. І., Штаблавий, І. І., Юркін, І. М., Юхимчук, В. О.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: Інститут проблем реєстрації інформації НАН України 2023
• Schlagworte: chalcogenide films; Raman spectroscopy; scanning electron microscopy; structure; surface morphology
• Online Zugang: http://drsp.ipri.kiev.ua/article/view/300334
• Назва журналу: Data Recording, Storage & Processing

The results of investigations of the structure and surface morphology of annealed (As2S3)x(Sb2S3)y(SbI3)z  (x = 45, 40, 35 і 30; у =27.5, 30, 32.5 і 35; z = 27.5,30,32.5 і 35) films are presents. Amorphous (As2S3)x(Sb2S3)y(SbI3)z films with a thickness ~ 500 nm were obtained by vacuum evaporation of glasses corresponding compositions from quasi-closed effusion cells on to unheated glass substrates.  The films were annealed at a temperature of 398 K for 1 hour. The structure of the annealed films was studied by the Raman spectroscopy method. For the investigations of the surface morphology of films a field emission scanning electron microscopy (FESEM) analysis was performed. Based on the analysis of the positions and intensities of the main vibrational bands of the Raman spectra and SEM-images of the surfaces of the annealed films of the As2S3-Sb2S3-SbI3 system, it was established that their matrix mainly contains crystalline SbI3 inclusions that have a layered (two-dimensional) structure. Other weak features in the spectra of annealed films are related to the presence of As(Sb)S3, As4S4, As4S3, Sn, and S8 structural fragments in the matrix. Fig.: 4. Refs: 25 titles.