Automation of measurements of the rate of thin films chemical etching

• Дата: 2024
• Автори: Іваницький, В. П., Рубіш, В. М., Тарнай, А. А., Чичура, І. І., Рубіш, В. В., Далекорей, А. В., Мешко, Р. О., Рябощук, М. М., Цигика, В. В.
• Формат: Стаття
• Мова: Ukrainian
• Опубліковано: Інститут проблем реєстрації інформації НАН України 2024
• Теми: automation of chemical etching processes; chalcogenide amorphous films; photoresists; interference methods of thickness control
• Онлайн доступ: http://drsp.ipri.kiev.ua/article/view/316977
• Назва журналу: Data Recording, Storage & Processing

The peculiarities of the interference method application for the processes of controlling the thin films thickness and measuring their etching rate are analyzed. The possibilities of complete automation of such processes during chemical etching of various types of substances have been investigated. In the course of research, an optical structural diagram of the interference method was developed, which is optimal for automatic measurement of the thin films etching rate. This optical scheme is implemented with normal incidence of optical probing radiation on the test sample in the form of a substrate with a thin film. It is recommended to use optical fibers as elements of the entire optical path of the scheme. Within the framework of the proposed optical scheme, changes in the interference pattern on As2S3 thin films during their chemical etching in an aqueous solution of sodium carbonate were experimentally investigated. The behavior of the intensity of interference during the etching process indicates the prospects of using the interference method to create automatic devices for measuring the speed and dynamics of thin film etching in real time. The estimated absolute error of automatic etching rate measurements does not exceed ±0,5 nm/s. A limitation of the researched method was noted — the presence of a transparency window in some optical spectral range in the studied samples. The proposed approaches are suitable for designing devices for automatic control of chemical etching processes of various substances and for creating algorithms for the functioning of such devices. Tabl.: 1. Fig.: 3. Refs: 9 titles.