Chalcogenide semiconductors for information systems
The results of the research are jointly obtained by employees of the Institutes for Information for Information Recording, V.E. Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine Lashkarev, Electronic Physics of the NAS of Ukraine, Uzhgorod National Universit...
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| Дата: | 2026 |
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| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Українська |
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Інститут проблем реєстрації інформації НАН України
2026
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| Онлайн доступ: | https://drsp.ipri.kiev.ua/article/view/358449 |
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| Назва журналу: | Data Recording, Storage & Processing |
Репозитарії
Data Recording, Storage & Processing| _version_ | 1865395318681501696 |
|---|---|
| author | Рубіш, В. М. Петров, В. В. Крючин, А. А. Костюкевич, С. О. Рубіш, В. В. Трунов, М. Л. Поп, М. М. Кириленко, В. К. Тарнай, А. А. Дуркот, М. О. |
| author_facet | Рубіш, В. М. Петров, В. В. Крючин, А. А. Костюкевич, С. О. Рубіш, В. В. Трунов, М. Л. Поп, М. М. Кириленко, В. К. Тарнай, А. А. Дуркот, М. О. |
| author_sort | Рубіш, В. М. |
| baseUrl_str | http://drsp.ipri.kiev.ua/oai |
| collection | OJS |
| datestamp_date | 2026-05-16T22:01:18Z |
| description | The results of the research are jointly obtained by employees of the Institutes for Information for Information Recording, V.E. Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine Lashkarev, Electronic Physics of the NAS of Ukraine, Uzhgorod National University and Uzhgorod Materials Center of the Institute of Information Registration Problems on the creation of an elemental database of information systems based on the use of glassy chalcogenide semiconductors and new electro-optical and acousto-optical crystals for laser radiation control systems. Directions for further use of the obtained results have been determined.
Joint research by the Institute of Information for Information Recording of the NAS of Ukraine and the Uzhhorod Materials Center was initiated in the late 1970s.
The main areas of research in different years were the following: development and synthesis of glassy chalcogenide semiconductors for optical disk media; development of methods for depositing glassy chalcogenide semiconductors on the inner surface of cylindrical substrates of optical media; development and study of «glass-crystal» phase transitions in chalcogenide semiconductors to create reversible media; development of technology for manufacturing optical media for long-term information storage; development of technology for synthesizing new electro-optical and acousto-optical crystals for laser radiation control systems in optical information recording systems; study of the effect of photoinduced mass transfer in thin films of chalcogenide semiconductors and the possibility of creating relief periodic structures directly during the process of exposing films; study of technology for creating nanostructured thin films of chalcogenide semiconductors; study ferroelectric properties of chalcogenide semiconductors and the possibility of creating non-volatile memory based on them.
The following main results were obtained:
Multicomponent chalcogenide glassy semiconductors for WORM-type optical media with photothermal recording have been developed and synthesized. Optical media using the developed glasses provided long-term storage of recorded information.
A technology for depositing thin films of chalcogenide glassy semiconductors on the inner surfaces of glass cylindrical substrates for small-sized optical media with immersion recording has been developed.
Optical recording processes based on glass-crystal phase transitions have been studied. The compositions of chalcogenide semiconductors that provide high recording and erasing speeds of recorded images have been determined. The prospects of using such a recording mode for creating reconfigurable diffraction elements have been shown.
A technology for ultra-dense optical recording on thin films of chalcogenide glassy semiconductors with gold nanoparticles has been developed.
The processes of photoinduced mass transfer in thin films of chalcogenide semiconductors have been studied and the prospects of using this effect for creating protective elements have been shown.
Methods for creating highly sensitive heavy metal sensors based on nanostructured metallic and semiconductor materials have been developed and investigated. Fig.: 11. Refs: 42 titles.
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| doi_str_mv | 10.35681/1560-9189.2026.28.1.358449 |
| first_indexed | 2026-05-17T01:00:05Z |
| format | Article |
| id | drspiprikievua-article-358449 |
| institution | Data Recording, Storage & Processing |
| keywords_txt_mv | keywords |
| language | Ukrainian |
| last_indexed | 2026-05-17T01:00:05Z |
| publishDate | 2026 |
| publisher | Інститут проблем реєстрації інформації НАН України |
| record_format | ojs |
| spelling | drspiprikievua-article-3584492026-05-16T22:01:18Z Chalcogenide semiconductors for information systems Халькогенідні напівпровідники для інформаційних систем Рубіш, В. М. Петров, В. В. Крючин, А. А. Костюкевич, С. О. Рубіш, В. В. Трунов, М. Л. Поп, М. М. Кириленко, В. К. Тарнай, А. А. Дуркот, М. О. chalcogenide semiconductors, phase transitions, ablation, photoinduced mass transport, reconfigurable diffraction elements, data recording халькогенідні напівпровідники, фазові переходи, абляція, фотоіндукований мастранспорт, реконфігуровані дифракційні елементи The results of the research are jointly obtained by employees of the Institutes for Information for Information Recording, V.E. Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine Lashkarev, Electronic Physics of the NAS of Ukraine, Uzhgorod National University and Uzhgorod Materials Center of the Institute of Information Registration Problems on the creation of an elemental database of information systems based on the use of glassy chalcogenide semiconductors and new electro-optical and acousto-optical crystals for laser radiation control systems. Directions for further use of the obtained results have been determined. Joint research by the Institute of Information for Information Recording of the NAS of Ukraine and the Uzhhorod Materials Center was initiated in the late 1970s. The main areas of research in different years were the following: development and synthesis of glassy chalcogenide semiconductors for optical disk media; development of methods for depositing glassy chalcogenide semiconductors on the inner surface of cylindrical substrates of optical media; development and study of «glass-crystal» phase transitions in chalcogenide semiconductors to create reversible media; development of technology for manufacturing optical media for long-term information storage; development of technology for synthesizing new electro-optical and acousto-optical crystals for laser radiation control systems in optical information recording systems; study of the effect of photoinduced mass transfer in thin films of chalcogenide semiconductors and the possibility of creating relief periodic structures directly during the process of exposing films; study of technology for creating nanostructured thin films of chalcogenide semiconductors; study ferroelectric properties of chalcogenide semiconductors and the possibility of creating non-volatile memory based on them. The following main results were obtained: Multicomponent chalcogenide glassy semiconductors for WORM-type optical media with photothermal recording have been developed and synthesized. Optical media using the developed glasses provided long-term storage of recorded information. A technology for depositing thin films of chalcogenide glassy semiconductors on the inner surfaces of glass cylindrical substrates for small-sized optical media with immersion recording has been developed. Optical recording processes based on glass-crystal phase transitions have been studied. The compositions of chalcogenide semiconductors that provide high recording and erasing speeds of recorded images have been determined. The prospects of using such a recording mode for creating reconfigurable diffraction elements have been shown. A technology for ultra-dense optical recording on thin films of chalcogenide glassy semiconductors with gold nanoparticles has been developed. The processes of photoinduced mass transfer in thin films of chalcogenide semiconductors have been studied and the prospects of using this effect for creating protective elements have been shown. Methods for creating highly sensitive heavy metal sensors based on nanostructured metallic and semiconductor materials have been developed and investigated. Fig.: 11. Refs: 42 titles. Наведено результати досліджень, отриманих спільно співробітниками Інститутів проблем реєстрації інформації, фізики напівпровідників ім. В.Є. Лашкарьова, електронної фізики НАН України, Ужгородського національного університету та Ужгородського центру матеріалів Інституту проблем реєстрації інформації зі створення елементної бази інформаційних систем на основі використання склоподібних халькогенідних напівпровідників і нових електрооптичних та акустооптичних кристалів для систем керування лазерним випромінюванням. Визначено напрямки подальшого використання отриманих результатів. Інститут проблем реєстрації інформації НАН України 2026-03-17 Article Article application/pdf https://drsp.ipri.kiev.ua/article/view/358449 10.35681/1560-9189.2026.28.1.358449 Data Recording, Storage & Processing; Vol. 28 No. 1 (2026); 3-20 Регистрация, хранение и обработка данных; Том 28 № 1 (2026); 3-20 Реєстрація, зберігання і обробка даних; Том 28 № 1 (2026); 3-20 1560-9189 uk https://drsp.ipri.kiev.ua/article/view/358449/346508 Авторське право (c) 2026 Реєстрація, зберігання і обробка даних |
| spellingShingle | chalcogenide semiconductors phase transitions ablation photoinduced mass transport reconfigurable diffraction elements data recording Рубіш, В. М. Петров, В. В. Крючин, А. А. Костюкевич, С. О. Рубіш, В. В. Трунов, М. Л. Поп, М. М. Кириленко, В. К. Тарнай, А. А. Дуркот, М. О. Chalcogenide semiconductors for information systems |
| title | Chalcogenide semiconductors for information systems |
| title_alt | Халькогенідні напівпровідники для інформаційних систем |
| title_full | Chalcogenide semiconductors for information systems |
| title_fullStr | Chalcogenide semiconductors for information systems |
| title_full_unstemmed | Chalcogenide semiconductors for information systems |
| title_short | Chalcogenide semiconductors for information systems |
| title_sort | chalcogenide semiconductors for information systems |
| topic | chalcogenide semiconductors phase transitions ablation photoinduced mass transport reconfigurable diffraction elements data recording |
| topic_facet | chalcogenide semiconductors phase transitions ablation photoinduced mass transport reconfigurable diffraction elements data recording халькогенідні напівпровідники фазові переходи абляція фотоіндукований мастранспорт реконфігуровані дифракційні елементи |
| url | https://drsp.ipri.kiev.ua/article/view/358449 |
| work_keys_str_mv | AT rubíšvm chalcogenidesemiconductorsforinformationsystems AT petrovvv chalcogenidesemiconductorsforinformationsystems AT krûčinaa chalcogenidesemiconductorsforinformationsystems AT kostûkevičso chalcogenidesemiconductorsforinformationsystems AT rubíšvv chalcogenidesemiconductorsforinformationsystems AT trunovml chalcogenidesemiconductorsforinformationsystems AT popmm chalcogenidesemiconductorsforinformationsystems AT kirilenkovk chalcogenidesemiconductorsforinformationsystems AT tarnajaa chalcogenidesemiconductorsforinformationsystems AT durkotmo chalcogenidesemiconductorsforinformationsystems AT rubíšvm halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT petrovvv halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT krûčinaa halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT kostûkevičso halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT rubíšvv halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT trunovml halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT popmm halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT kirilenkovk halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT tarnajaa halʹkogenídnínapívprovídnikidlâínformacíjnihsistem AT durkotmo halʹkogenídnínapívprovídnikidlâínformacíjnihsistem |