Energy characteristics for nanosecond current interrupter of semiconductor-magnetic pulse generator’s terminal stage

• Дата: 2023
• Автор: Khrysto, O. I.
• Формат: Стаття
• Мова: English; Ukrainian
• Опубліковано: National Technical University "Kharkiv Polytechnic Institute" and State Institution “Institute of Technical Problems of Magnetism of the National Academy of Sciences of Ukraine” 2023
• Теми: semiconductor-magnetic pulse generator; nanosecond current interrupter; saturable reactor; magnetization curve; numerical simulation; магнітно - напівпровідниковий генератор імпульсів; переривник струму; комутуючий дросель; крива намагнічування; числове моделювання
• Онлайн доступ: http://eie.khpi.edu.ua/article/view/262200
• Назва журналу: Electrical Engineering & Electromechanics

Introduction. A semiconductor diode based on reverse current interruption is used to increase a pulse amplitude and peak power delivered on the process load. Usually, a current interrupter is located in the last stage of semiconductor-magnetic pulse generator (SMPG) and is connected in parallel to t...