The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base
In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of t...
Збережено в:
| Дата: | 2015 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Науковий фізико-технологічний центр МОН та НАН України
2015
|
| Назва видання: | Физическая инженерия поверхности |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/108760 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base / Sh.A. Mirsagatov, A.K. Uteniyazov // Физическая инженерия поверхности. — 2015. — Т. 13, № 3. — С. 325-329. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-108760 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1087602016-11-16T03:02:46Z The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base Mirsagatov, Sh.A. Uteniyazov, A.K. In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of the base on the mechanism of current’s transport are given. В работе исследуется механизм переноса тока в структуре Al-p-CdTe-Mo, когда толщина базы w ≤ 10 μm. Приведены результаты исследований вольт-амперных характеристик структуры Al-p-CdTe-Mo с разными толщинами базы и влияния толщины базы на механизм переноса тока. У роботі досліджується механізм перенесення струму в структурі Al-p-CdTe-Mo, коли товщина бази w ≤ 10 μm. Наведено результати досліджень вольт-амперних характеристик структури Al-p-CdTe-Mo з різними товщинами бази та впливу товщини бази на механізм перенесення струму. 2015 Article The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base / Sh.A. Mirsagatov, A.K. Uteniyazov // Физическая инженерия поверхности. — 2015. — Т. 13, № 3. — С. 325-329. — Бібліогр.: 15 назв. — англ. 1999-8074 http://dspace.nbuv.gov.ua/handle/123456789/108760 53.043, 53.023.539.234 en Физическая инженерия поверхности Науковий фізико-технологічний центр МОН та НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of the base on the mechanism of current’s transport are given. |
| format |
Article |
| author |
Mirsagatov, Sh.A. Uteniyazov, A.K. |
| spellingShingle |
Mirsagatov, Sh.A. Uteniyazov, A.K. The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base Физическая инженерия поверхности |
| author_facet |
Mirsagatov, Sh.A. Uteniyazov, A.K. |
| author_sort |
Mirsagatov, Sh.A. |
| title |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base |
| title_short |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base |
| title_full |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base |
| title_fullStr |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base |
| title_full_unstemmed |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base |
| title_sort |
mechanism of current transport in the structure al-p-cdte-mo with different thickness of the base |
| publisher |
Науковий фізико-технологічний центр МОН та НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/108760 |
| citation_txt |
The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base / Sh.A. Mirsagatov, A.K. Uteniyazov // Физическая инженерия поверхности. — 2015. — Т. 13, № 3. — С. 325-329. — Бібліогр.: 15 назв. — англ. |
| series |
Физическая инженерия поверхности |
| work_keys_str_mv |
AT mirsagatovsha themechanismofcurrenttransportinthestructurealpcdtemowithdifferentthicknessofthebase AT uteniyazovak themechanismofcurrenttransportinthestructurealpcdtemowithdifferentthicknessofthebase AT mirsagatovsha mechanismofcurrenttransportinthestructurealpcdtemowithdifferentthicknessofthebase AT uteniyazovak mechanismofcurrenttransportinthestructurealpcdtemowithdifferentthicknessofthebase |
| first_indexed |
2023-10-18T20:18:23Z |
| last_indexed |
2023-10-18T20:18:23Z |
| _version_ |
1796149510121979904 |