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Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 МeV electrons

Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 МeV electrons

Amorphous and microcrystalline silicon are well known materials for thin film large area electronics. The defects in the material are an important issue for the device quality and the manufacturing process optimization. We study defects in thin film silicon with electron spin resonance (ESR). In ord...

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Bibliographic Details
Main Authors: Astakhov, O., Finger, F., Carius, R., Lambertz, A., Neklyudov, I., Petrusenko, Yu., Borysenko, V., Barankov, D.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2007
Series:Вопросы атомной науки и техники
Subjects:
Физика радиационных повреждений и явлений в твердых телах
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/110646
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http://dspace.nbuv.gov.ua/handle/123456789/110646

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