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Deposition of TiO₂ thin films using atmospheric dielectric barrier discharge

In this paper the influence of precursor (titanium tetraisopropoxide (TTIP)) temperature, precursor and gas flow rates on the surface properties of TiO₂ thin films deposited by atmospheric dielectric barrier discharge (ADBD) chemical vapour deposition (CVD) were investigated. Argon was used as worki...

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Bibliographic Details
Main Authors: Klenko, Y., Píchal, J.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2008
Series:Вопросы атомной науки и техники
Subjects:
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/110976
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