Capacitance spectroscopy of InAs self-assembled quantum dots

• Дата: 1998
• Автори: Martin, P.M., Belyaev, A.E., Eaves, L., Main, P.C., Sheard, F.W., Ihn, T., Henini, M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/114663
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Capacitance spectroscopy of InAs self-assembled quantum dots / P.M. Martin, A.E. Belyaev, L. Eaves, P.C. Main, F.W. Sheard, T. Ihn, M. Henini // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 7-12. — Бібліогр.: 16 назв. — англ.

Capacitance spectroscopy is used to study electronic properties of self-assembled InAs quantum dots. The capacitance-voltage, C(V), measurements in combination with the magneto-capacitance, C(B), results make it possible to investigate the electrostatic profile of a series of single-barrier n-i-n GaAs/AlAs/GaAs heterostructures incorporating a layer of self-assembled InAs quantum dots in the AlAs barrier. We find that the negative charge associated with electron filling of the dots is closely compensated by a positive charge in the AlAs barrier, which we ascribe to ionised defects or impurities, possibly in association with the quantum dots. It is shown the compensation degree considerably depends on the growth conditions.