The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze...
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| Видавець: | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
|---|---|
| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117016 |
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| Цитувати: | The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117016 |
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| record_format |
dspace |
| spelling |
irk-123456789-1170162017-05-20T03:02:43Z The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE Yildiz, A. Kasap, M. Квантовые эффекты в полупpоводниках и диэлектриках Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T⁻¹.⁶³, suggesting that electron–electron interactions are dominant. 2010 Article The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. 0132-6414 PACS: 72.20.My, 72.20.Fr, 72.80.Ey http://dspace.nbuv.gov.ua/handle/123456789/117016 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Квантовые эффекты в полупpоводниках и диэлектриках Квантовые эффекты в полупpоводниках и диэлектриках |
| spellingShingle |
Квантовые эффекты в полупpоводниках и диэлектриках Квантовые эффекты в полупpоводниках и диэлектриках Yildiz, A. Kasap, M. The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE Физика низких температур |
| description |
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T⁻¹.⁶³, suggesting that electron–electron interactions are dominant. |
| format |
Article |
| author |
Yildiz, A. Kasap, M. |
| author_facet |
Yildiz, A. Kasap, M. |
| author_sort |
Yildiz, A. |
| title |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_short |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_full |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_fullStr |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_full_unstemmed |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_sort |
temperature dependence of the inelastic scattering time in ingan grown by movpe |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2010 |
| topic_facet |
Квантовые эффекты в полупpоводниках и диэлектриках |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117016 |
| citation_txt |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. |
| series |
Физика низких температур |
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2023-10-18T20:28:50Z |
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2023-10-18T20:28:50Z |
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1796150309666422784 |