Optical spectroscopy and microscopy of radiationinduced light-emitting point defects in lithium fluoride crystals and films
Broad-band light-emitting radiation-induced F₂ and F₃⁺ electronic point defects, stable and laser-active at room temperature in lithium fluoride crystals and films, find applications in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and in novel radiation imaging...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2012
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117434 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical spectroscopy and microscopy of radiationinduced light-emitting point defects in lithium fluoride crystals and films / R.M. Montereali, F. Bonfigli, F. Menchini, M.A. Vincenti // Физика низких температур. — 2012. — Т. 38, № 8. — С. 976-984. — Бібліогр.: 30 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Broad-band light-emitting radiation-induced F₂ and F₃⁺
electronic point defects, stable and laser-active at
room temperature in lithium fluoride crystals and films, find applications in dosimeters, tuneable color-center lasers,
broad-band miniaturized light sources and in novel radiation imaging detectors. A brief review of their
photoemission properties is presented, and their peculiarities at liquid nitrogen temperature are discussed. A few
experimental results about optical spectroscopy and fluorescence microscopy of these radiation-induced point
defects in LiF crystals and thin films are presented to obtain information about the coloration curves, the point
defects formation efficiency, the effects of the photo-bleaching processes, and so on. The control of local formation,
stabilization and transformation of radiation-induced light-emitting defect centers is crucial for the development
of optical active micro-components and nanostructures. Some of the advantages of low temperature
measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for the spatial
mapping of these point defects thorough the optical reading of their visible photoluminescence, are highlighted. |
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