Electrophysical properties of meso-porous silicon free standing films modified with palladium
Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of pa...
Збережено в:
| Дата: | 2011 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117603 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117603 |
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dspace |
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irk-123456789-1176032017-05-26T03:03:42Z Electrophysical properties of meso-porous silicon free standing films modified with palladium Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of palladium particles into the porous matrix is observed. Impedance change regularities during oxidation of the samples have been measured. The explanation of experimental results by asymmetrical distribution of charge carrier traps in the bulk of porous silicon has been suggested. Energy band diagrams and charge transfer mechanisms of these heterostructures are discussed. 2011 Article Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 61.72.uf, 72.80.Cw, 73.61.Cw http://dspace.nbuv.gov.ua/handle/123456789/117603 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Resistivity and complex impedance voltage dependences for thick mesoporous
silicon free layers were studied in this work. The asymmetrical by the sign of
applied voltage experimental curves at low frequencies have been obtained. Modification
of electrophysical properties due to introduction of palladium particles into the porous
matrix is observed. Impedance change regularities during oxidation of the samples have
been measured. The explanation of experimental results by asymmetrical distribution of
charge carrier traps in the bulk of porous silicon has been suggested. Energy band
diagrams and charge transfer mechanisms of these heterostructures are discussed. |
| format |
Article |
| author |
Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| spellingShingle |
Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. Electrophysical properties of meso-porous silicon free standing films modified with palladium Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| author_sort |
Manilov, A.I. |
| title |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_short |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_fullStr |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full_unstemmed |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_sort |
electrophysical properties of meso-porous silicon free standing films modified with palladium |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117603 |
| citation_txt |
Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT manilovai electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT skryshevskyva electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT alekseevsa electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT kuznetsovgv electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium |
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2023-10-18T20:30:11Z |
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