Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into ac...
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| Дата: | 2013 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117682 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1176822017-05-27T03:05:48Z Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Kavetskyy, T.S. Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy. 2013 Article Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Fs http://dspace.nbuv.gov.ua/handle/123456789/117682 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for
positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R
up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps
components are observed in positron annihilation lifetime spectroscopy. |
| format |
Article |
| author |
Kavetskyy, T.S. |
| spellingShingle |
Kavetskyy, T.S. Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kavetskyy, T.S. |
| author_sort |
Kavetskyy, T.S. |
| title |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_short |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_fullStr |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full_unstemmed |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_sort |
modified correlation equation in the fsdp-related void-based model for as₂s(se)₃ chalcogenide glasses |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117682 |
| citation_txt |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:22Z |
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2023-10-18T20:30:22Z |
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