Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established usi...
Збережено в:
| Дата: | 2013 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117683 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117683 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1176832017-05-27T03:05:38Z Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established using electron and atomic force microscopies, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemicalmechanical polishing the investigated materials has been made. Concentration regions of polishing solutions have been found for various types of ZnSe surface treatment: to remove the damaged layer, to control the etching rate, to obtain samples of a given thickness. 2013 Article Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/117683 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The process of chemical polishing the undoped and doped ZnSe crystals
surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
Surface states after chemical etching have been established using electron and atomic
force microscopies, and it was shown that the surface state is improved after chemical
etching. Etchant selection to develop slow polishing compositions for chemicalmechanical
polishing the investigated materials has been made. Concentration regions of
polishing solutions have been found for various types of ZnSe surface treatment: to
remove the damaged layer, to control the etching rate, to obtain samples of a given
thickness. |
| format |
Article |
| author |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| spellingShingle |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| author_sort |
Tomashyk, V.M. |
| title |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_short |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_fullStr |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full_unstemmed |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_sort |
optimization of conditions for treatment of znse crystal surfaces by chemical etching |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117683 |
| citation_txt |
Optimization of conditions for treatment of ZnSe crystal surfaces
by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT tomashykvm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT kravtsovaas optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT tomashykzf optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT stratiychukib optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT galkinsm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching |
| first_indexed |
2023-10-18T20:30:22Z |
| last_indexed |
2023-10-18T20:30:22Z |
| _version_ |
1796150377619390464 |