The electric field gradient asymmetry parameter in InSe
The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four resonance transitions of quadrupole nuclii with spins I = 9/2 testifies to existen...
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| Дата: | 2011 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117706 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117706 |
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dspace |
| spelling |
irk-123456789-1177062017-05-27T03:05:47Z The electric field gradient asymmetry parameter in InSe Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four resonance transitions of quadrupole nuclii with spins I = 9/2 testifies to existence of axial symmetry of the electric field gradient in In nucleus positions inside the InSe crystal structure. The latter is confirmed by the dependence of the NQR spectrum amplitude on the angle between the main crystal axis c and vector of high-frequency field H₁. However, presence of a residual intensity in the spectra at c || Н₁ can indicate the existence of crystal blocks in bulk of the sample with weak angular misorientation. 2011 Article The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 76.60.Gv http://dspace.nbuv.gov.ua/handle/123456789/117706 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The complex NQR spectra of ¹¹⁵In caused by presence of structural defects
called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of
average frequencies of NQR spectra that correspond to four resonance transitions of
quadrupole nuclii with spins I = 9/2 testifies to existence of axial symmetry of the
electric field gradient in In nucleus positions inside the InSe crystal structure. The latter
is confirmed by the dependence of the NQR spectrum amplitude on the angle between
the main crystal axis c and vector of high-frequency field H₁. However, presence of a
residual intensity in the spectra at c || Н₁ can indicate the existence of crystal blocks in
bulk of the sample with weak angular misorientation. |
| format |
Article |
| author |
Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. |
| spellingShingle |
Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. The electric field gradient asymmetry parameter in InSe Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. |
| author_sort |
Kovalyuk, Z.D. |
| title |
The electric field gradient asymmetry parameter in InSe |
| title_short |
The electric field gradient asymmetry parameter in InSe |
| title_full |
The electric field gradient asymmetry parameter in InSe |
| title_fullStr |
The electric field gradient asymmetry parameter in InSe |
| title_full_unstemmed |
The electric field gradient asymmetry parameter in InSe |
| title_sort |
electric field gradient asymmetry parameter in inse |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117706 |
| citation_txt |
The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:26Z |
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