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Electrical properties of MIS structures with silicon nanoclusters

Electrical properties of MIS structures with silicon nanoclusters

The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielec...

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Bibliographic Details
Main Authors: Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117722
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http://dspace.nbuv.gov.ua/handle/123456789/117722

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