Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by...
Збережено в:
| Дата: | 2013 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117729 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117729 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177292017-05-27T03:04:20Z Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN Sheremet, V.N. The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by diffusion supply of electrons. It is shown that microwave treatment increases the dislocation density in the near-contact region of contact structure and reduces the relative spread of resistivity values of contacts formed on the wafer. 2013 Article Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Cg, Ns; 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/117729 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic
contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained
dependences are described using a model of current flow via metal shunts associated
with dislocations, the current being limited by diffusion supply of electrons. It is shown
that microwave treatment increases the dislocation density in the near-contact region of
contact structure and reduces the relative spread of resistivity values of contacts formed
on the wafer. |
| format |
Article |
| author |
Sheremet, V.N. |
| spellingShingle |
Sheremet, V.N. Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sheremet, V.N. |
| author_sort |
Sheremet, V.N. |
| title |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_short |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_full |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_fullStr |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_full_unstemmed |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_sort |
effect of microwave treatment on current flow mechanism in ohmic contacts to gan |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117729 |
| citation_txt |
Effect of microwave treatment on current flow mechanism in
ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sheremetvn effectofmicrowavetreatmentoncurrentflowmechanisminohmiccontactstogan |
| first_indexed |
2023-10-18T20:30:29Z |
| last_indexed |
2023-10-18T20:30:29Z |
| _version_ |
1796150383458910208 |