Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films,...

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Бібліографічні деталі
Дата:2013
Автори: Fodchuk, I.M., Gutsuliak, I.I., Zaplitniy, R.A., Balovsyak, S.V., Yaremiy, I.P., Bonchyk, O.Yu., Savitskiy, G.V., Syvorotka, I.M., Lytvyn, P.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117733
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117733
record_format dspace
spelling irk-123456789-1177332017-05-27T03:03:31Z Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions Fodchuk, I.M. Gutsuliak, I.I. Zaplitniy, R.A. Balovsyak, S.V. Yaremiy, I.P. Bonchyk, O.Yu. Savitskiy, G.V. Syvorotka, I.M. Lytvyn, P.M. The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films, which includes reducing the observed magnetic losses after high-dose implantation, is accompanied by essential ordering of magnetic domains on the surface of the implanted films. There is a direct dependence of the magnetic properties on the dose of implanted atoms, accompanied by a significant dispersion and amorphization of surface layer and formation of a clear magnetic structure. 2013 Article Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 75.50.Gg http://dspace.nbuv.gov.ua/handle/123456789/117733 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films, which includes reducing the observed magnetic losses after high-dose implantation, is accompanied by essential ordering of magnetic domains on the surface of the implanted films. There is a direct dependence of the magnetic properties on the dose of implanted atoms, accompanied by a significant dispersion and amorphization of surface layer and formation of a clear magnetic structure.
format Article
author Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
spellingShingle Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
author_sort Fodchuk, I.M.
title Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_short Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_full Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_fullStr Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_full_unstemmed Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_sort magnetic force microscopy of ylafeo films implanted by high dose of nitrogen ions
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117733
citation_txt Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:30Z
last_indexed 2023-10-18T20:30:30Z
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