On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃
The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases al...
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| Дата: | 2013 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117735 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117735 |
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dspace |
| spelling |
irk-123456789-1177352017-05-27T03:03:09Z On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases almost linear with decreasing the temperature from 300 down to 100 K for samples in the dark. At the same time, for samples that were exposed during cooling to laser irradiation, the increase of the parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp = 145…147 K. This leap is typical for systems in which a phase transition of the first order occurs. Furthermore, there were investigated temperature dependences of the integral relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and under laser irradiation. It was established the character of the dependence I(T) for these reflexes was changed significantly by laser irradiation. 2013 Article On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.50.Ks, 77.80.Bh http://dspace.nbuv.gov.ua/handle/123456789/117735 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The temperature dependences of the unit cell parameters a(T) and c(T) of
Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the
temperature range 100 to 300 K in the dark mode and under laser irradiation (λ =
532 nm). It was found that the parameter c increases almost linear with decreasing the
temperature from 300 down to 100 K for samples in the dark. At the same time, for
samples that were exposed during cooling to laser irradiation, the increase of the
parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp =
145…147 K. This leap is typical for systems in which a phase transition of the first order
occurs. Furthermore, there were investigated temperature dependences of the integral
relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and
under laser irradiation. It was established the character of the dependence I(T) for these
reflexes was changed significantly by laser irradiation. |
| format |
Article |
| author |
Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. |
| spellingShingle |
Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. |
| author_sort |
Borovoy, N. |
| title |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_short |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_full |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_fullStr |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_full_unstemmed |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_sort |
on features of crystal structure of semiconductor-ferroelectric ag₃ass₃ |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117735 |
| citation_txt |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT borovoyn onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT gololobovyu onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT isaienkog onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT salnika onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 |
| first_indexed |
2023-10-18T20:30:30Z |
| last_indexed |
2023-10-18T20:30:30Z |
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1796150384094347264 |