Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods

Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods

Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy (HYSC...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2010
Автори: Savchenko, D.V., Pöppl, A., Kalabukhova, E.N., Venger, E.F., Gadzira, M.P., Gnesin, G.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117738
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Цитувати:Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods/ D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, E.F. Venger, M.P. Gadzira, G.G. Gnesin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 43-50. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117738
record_format dspace
spelling irk-123456789-1177382017-05-27T03:04:58Z Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods Savchenko, D.V. Pöppl, A. Kalabukhova, E.N. Venger, E.F. Gadzira, M.P. Gnesin, G.G. Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy (HYSCORE). Four ESE signals related to the paramagnetic centers labeled D1, D2, D3, D4 with g = 2.0043, g = 2.0029, g = 2.0031, g = 2.0037 were resolved in FS ESE spectrum due to their different spin relaxation times. As deduced from the study of the superhyperfine structure of the D2 defect by FS ESE, pulse ENDOR and HYSCORE methods the dominant paramagnetic center is a carbon vacancy (Vc) localized in B-SiC crystalline phase of the np-SiC. The parameters of the D2 center coincide with those found for the Vc in np-SiC obtained by laser pyrolysis method. Three other defects were identified by comparison of their EPR parameters with the microstructure of the np-SiC. The D1 defect was attributed to the Vc vacancy located in a-SiC crystalline phase. The D3 defect is identified with the carbon dangling bonds located in the carbon excess phase. The D4 defect was assigned to a threefold-coordinated Si atom bonded with one nitrogen atom, resulting in the formation of the local bonding Si-Si2N configuration in a-Si3N4 phase. 2010 Article Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods/ D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, E.F. Venger, M.P. Gadzira, G.G. Gnesin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 43-50. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 73.22.-f, 76.30.-v, 76.70.Dx http://dspace.nbuv.gov.ua/handle/123456789/117738 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy (HYSCORE). Four ESE signals related to the paramagnetic centers labeled D1, D2, D3, D4 with g = 2.0043, g = 2.0029, g = 2.0031, g = 2.0037 were resolved in FS ESE spectrum due to their different spin relaxation times. As deduced from the study of the superhyperfine structure of the D2 defect by FS ESE, pulse ENDOR and HYSCORE methods the dominant paramagnetic center is a carbon vacancy (Vc) localized in B-SiC crystalline phase of the np-SiC. The parameters of the D2 center coincide with those found for the Vc in np-SiC obtained by laser pyrolysis method. Three other defects were identified by comparison of their EPR parameters with the microstructure of the np-SiC. The D1 defect was attributed to the Vc vacancy located in a-SiC crystalline phase. The D3 defect is identified with the carbon dangling bonds located in the carbon excess phase. The D4 defect was assigned to a threefold-coordinated Si atom bonded with one nitrogen atom, resulting in the formation of the local bonding Si-Si2N configuration in a-Si3N4 phase.
format Article
author Savchenko, D.V.
Pöppl, A.
Kalabukhova, E.N.
Venger, E.F.
Gadzira, M.P.
Gnesin, G.G.
spellingShingle Savchenko, D.V.
Pöppl, A.
Kalabukhova, E.N.
Venger, E.F.
Gadzira, M.P.
Gnesin, G.G.
Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Savchenko, D.V.
Pöppl, A.
Kalabukhova, E.N.
Venger, E.F.
Gadzira, M.P.
Gnesin, G.G.
author_sort Savchenko, D.V.
title Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
title_short Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
title_full Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
title_fullStr Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
title_full_unstemmed Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods
title_sort intrinsic defects in nonstoichiometric b-sic nanoparticles studied by pulsed magnetic resonance methods
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/117738
citation_txt Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods/ D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, E.F. Venger, M.P. Gadzira, G.G. Gnesin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 43-50. — Бібліогр.: 25 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT savchenkodv intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
AT poppla intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
AT kalabukhovaen intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
AT vengeref intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
AT gadziramp intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
AT gnesingg intrinsicdefectsinnonstoichiometricbsicnanoparticlesstudiedbypulsedmagneticresonancemethods
first_indexed 2023-10-18T20:30:30Z
last_indexed 2023-10-18T20:30:30Z
_version_ 1796150384411017216

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