Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stac...
Збережено в:
| Дата: | 2010 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117746 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117746 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177462017-05-27T03:04:26Z Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing Smyntyna, V.A. Sviridova, O.V. The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stacking faults are generated during the oxidation process, and the mechanism of their formation is connected with the defective layered structure of initial silicon wafers. It was established that defects of layered heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other hand, prevent their propagation to the wafer bulk. 2010 Article Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 61.72.Nn http://dspace.nbuv.gov.ua/handle/123456789/117746 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The type, density, and distribution of defects in initial and oxidated
monocrystalline silicon wafers were studied by modern methods. It was established that
disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
monocrystalline silicon. It was shown that stacking faults are generated during the
oxidation process, and the mechanism of their formation is connected with the defective
layered structure of initial silicon wafers. It was established that defects of layered
heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other
hand, prevent their propagation to the wafer bulk. |
| format |
Article |
| author |
Smyntyna, V.A. Sviridova, O.V. |
| spellingShingle |
Smyntyna, V.A. Sviridova, O.V. Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Smyntyna, V.A. Sviridova, O.V. |
| author_sort |
Smyntyna, V.A. |
| title |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_short |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_full |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_fullStr |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_full_unstemmed |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_sort |
genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117746 |
| citation_txt |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT smyntynava genesisofinitialdefectsintheprocessofmonocrystallinesiliconoxidationwithsubsequentscribing AT sviridovaov genesisofinitialdefectsintheprocessofmonocrystallinesiliconoxidationwithsubsequentscribing |
| first_indexed |
2023-10-18T20:30:31Z |
| last_indexed |
2023-10-18T20:30:31Z |
| _version_ |
1796150385255120896 |