Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity a...
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| Дата: | 2010 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117747 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117747 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177472017-05-27T03:05:50Z Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures Veleschuk, V.P. Lyashenko, O.V. Vlasenko, Z.K. Kysselyuk, M.P. It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters. 2010 Article Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 43.35+d, 43.50+y, 72.70+m, 73.50.TD, 78.60.Fi, 78.66.Fd http://dspace.nbuv.gov.ua/handle/123456789/117747 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
current passage redistribution of electroluminescence intensity on the structure surface
takes place simultaneously with radiation of acoustic emission. Local (on surface area)
fluctuations of electroluminescence intensity are observed together with general
degradation of electro-physical parameters. |
| format |
Article |
| author |
Veleschuk, V.P. Lyashenko, O.V. Vlasenko, Z.K. Kysselyuk, M.P. |
| spellingShingle |
Veleschuk, V.P. Lyashenko, O.V. Vlasenko, Z.K. Kysselyuk, M.P. Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Veleschuk, V.P. Lyashenko, O.V. Vlasenko, Z.K. Kysselyuk, M.P. |
| author_sort |
Veleschuk, V.P. |
| title |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| title_short |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| title_full |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| title_fullStr |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| title_full_unstemmed |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| title_sort |
acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117747 |
| citation_txt |
Acoustic emission and fluctuations of electroluminescence intensity
in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT veleschukvp acousticemissionandfluctuationsofelectroluminescenceintensityinlightemittingheterostructures AT lyashenkoov acousticemissionandfluctuationsofelectroluminescenceintensityinlightemittingheterostructures AT vlasenkozk acousticemissionandfluctuationsofelectroluminescenceintensityinlightemittingheterostructures AT kysselyukmp acousticemissionandfluctuationsofelectroluminescenceintensityinlightemittingheterostructures |
| first_indexed |
2023-10-18T20:30:32Z |
| last_indexed |
2023-10-18T20:30:32Z |
| _version_ |
1796150385361027072 |