Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crysta...
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| Дата: | 2011 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117762 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117762 |
|---|---|
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dspace |
| spelling |
irk-123456789-1177622017-05-27T03:04:57Z Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Boiko, I.I. Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crystal. The drag effect considered here appears also in the form of non-monotonous dependences of conductivity on temperature and carrier concentration. 2011 Article Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72, 72.20 http://dspace.nbuv.gov.ua/handle/123456789/117762 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Conductivity of p-Si and p-Ge is considered for the two-band model with due
regard for mutual drag of light and heavy holes. It is shown that for small and moderate
temperatures this drag significantly diminishes the drift velocity of light holes and, as a
result, the whole conductivity of crystal. The drag effect considered here appears also in
the form of non-monotonous dependences of conductivity on temperature and carrier
concentration. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_short |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_fullStr |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full_unstemmed |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_sort |
influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117762 |
| citation_txt |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boikoii influenceofmutualdragoflightandheavyholesonconductivityofpsiliconandpgermanium |
| first_indexed |
2023-10-18T20:30:34Z |
| last_indexed |
2023-10-18T20:30:34Z |
| _version_ |
1796150386952765440 |