Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2011 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117768 |
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| Цитувати: | Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117768 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177682017-05-27T03:04:45Z Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells Gudenko1, Yu.M. Vainberg, V.V. Poroshin, V.M. Tulupenko, V.M. The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented. 2011 Article Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 73.21.Fg, 73.50.Gr, Pz http://dspace.nbuv.gov.ua/handle/123456789/117768 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong
lateral electric fields and conditions of carrier generation by the band-to-band light
absorption has been investigated experimentally. The data of the drift length, drift
mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under
the electric field up to 1500 V/cm are presented. |
| format |
Article |
| author |
Gudenko1, Yu.M. Vainberg, V.V. Poroshin, V.M. Tulupenko, V.M. |
| spellingShingle |
Gudenko1, Yu.M. Vainberg, V.V. Poroshin, V.M. Tulupenko, V.M. Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gudenko1, Yu.M. Vainberg, V.V. Poroshin, V.M. Tulupenko, V.M. |
| author_sort |
Gudenko1, Yu.M. |
| title |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
| title_short |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
| title_full |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
| title_fullStr |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
| title_full_unstemmed |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
| title_sort |
lateral drift of photo-generated charge carriers in the p-sige/si heterostructures with quantum wells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117768 |
| citation_txt |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gudenko1yum lateraldriftofphotogeneratedchargecarriersinthepsigesiheterostructureswithquantumwells AT vainbergvv lateraldriftofphotogeneratedchargecarriersinthepsigesiheterostructureswithquantumwells AT poroshinvm lateraldriftofphotogeneratedchargecarriersinthepsigesiheterostructureswithquantumwells AT tulupenkovm lateraldriftofphotogeneratedchargecarriersinthepsigesiheterostructureswithquantumwells |
| first_indexed |
2023-10-18T20:30:35Z |
| last_indexed |
2023-10-18T20:30:35Z |
| _version_ |
1796150387589251072 |