Suchergebnisse - Poroshin, V.M.
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Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells von Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2018)Volltext
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Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum von Neimash, V.B., Poroshin, V.M., Shepeliavyi, P.Ye., Yukhymchuk, V.O., Melnyk, V.V., Makara, M.A., Kuzmich, A.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)Volltext
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