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2025-02-23T10:44:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117808%22&qt=morelikethis&rows=5
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Spin-dependent current in silicon p-n junction diodes

Spin-dependent current in silicon p-n junction diodes

We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the ampli...

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Bibliographic Details
Main Authors: Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117808
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Summary:We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in inversion channel has been discussed.

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