2025-02-23T04:04:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117856%22&qt=morelikethis&rows=5
2025-02-23T04:04:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117856%22&qt=morelikethis&rows=5
2025-02-23T04:04:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T04:04:51-05:00 DEBUG: Deserialized SOLR response
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It i...

Full description

Saved in:
Bibliographic Details
Main Authors: Vitusevich, S. A., Forster, A., Belyaev, A. E., Glavin, B. A., Indlekofer, K. M., Luth, H., Konakova, R. V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117856
Tags: Add Tag
No Tags, Be the first to tag this record!
id irk-123456789-117856
record_format dspace
spelling irk-123456789-1178562017-05-28T03:02:34Z Optically controlled 2D tunnelling in GaAs delta-doped p-n junction Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation. 1999 Article Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.K, 68.55.L http://dspace.nbuv.gov.ua/handle/123456789/117856 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation.
format Article
author Vitusevich, S. A.
Forster, A.
Belyaev, A. E.
Glavin, B. A.
Indlekofer, K. M.
Luth, H.
Konakova, R. V.
spellingShingle Vitusevich, S. A.
Forster, A.
Belyaev, A. E.
Glavin, B. A.
Indlekofer, K. M.
Luth, H.
Konakova, R. V.
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Vitusevich, S. A.
Forster, A.
Belyaev, A. E.
Glavin, B. A.
Indlekofer, K. M.
Luth, H.
Konakova, R. V.
author_sort Vitusevich, S. A.
title Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
title_short Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
title_full Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
title_fullStr Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
title_full_unstemmed Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
title_sort optically controlled 2d tunnelling in gaas delta-doped p-n junction
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/117856
citation_txt Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT vitusevichsa opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT forstera opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT belyaevae opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT glavinba opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT indlekoferkm opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT luthh opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
AT konakovarv opticallycontrolled2dtunnellingingaasdeltadopedpnjunction
first_indexed 2023-10-18T20:30:50Z
last_indexed 2023-10-18T20:30:50Z
_version_ 1796150394568572928

Similar Items