Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It i...
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| Дата: | 1999 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117856 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1178562017-05-28T03:02:34Z Optically controlled 2D tunnelling in GaAs delta-doped p-n junction Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation. 1999 Article Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.K, 68.55.L http://dspace.nbuv.gov.ua/handle/123456789/117856 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation. |
| format |
Article |
| author |
Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. |
| spellingShingle |
Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. Optically controlled 2D tunnelling in GaAs delta-doped p-n junction Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. |
| author_sort |
Vitusevich, S. A. |
| title |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_short |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_full |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_fullStr |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_full_unstemmed |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_sort |
optically controlled 2d tunnelling in gaas delta-doped p-n junction |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117856 |
| citation_txt |
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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