Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands

Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independen...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:1999
Автор: Grigorchuk, N. I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117858
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117858
record_format dspace
spelling irk-123456789-1178582017-05-28T03:02:34Z Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands Grigorchuk, N. I. Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature. 1999 Article Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 71.35; 71.36; 78.20; S12 http://dspace.nbuv.gov.ua/handle/123456789/117858 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature.
format Article
author Grigorchuk, N. I.
spellingShingle Grigorchuk, N. I.
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Grigorchuk, N. I.
author_sort Grigorchuk, N. I.
title Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
title_short Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
title_full Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
title_fullStr Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
title_full_unstemmed Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
title_sort light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/117858
citation_txt Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT grigorchukni lightabsorptionbyddimensionalorganicsemiconductorsunderexcitontransitionsbetweenbroadbands
first_indexed 2023-10-18T20:30:50Z
last_indexed 2023-10-18T20:30:50Z
_version_ 1796150394780385280