Overheating effect and hole-phonon interaction in SiGe heterostructures
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The tempera...
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| Дата: | 2008 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117882 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1178822017-05-28T03:03:03Z Overheating effect and hole-phonon interaction in SiGe heterostructures Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. Низкоразмерные и неупорядоченные системы The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of small angle scattering. 2008 Article Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 72.15.Lh;72.20.Ht;72.20.My http://dspace.nbuv.gov.ua/handle/123456789/117882 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Низкоразмерные и неупорядоченные системы Низкоразмерные и неупорядоченные системы |
| spellingShingle |
Низкоразмерные и неупорядоченные системы Низкоразмерные и неупорядоченные системы Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. Overheating effect and hole-phonon interaction in SiGe heterostructures Физика низких температур |
| description |
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
small angle scattering. |
| format |
Article |
| author |
Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| author_facet |
Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| author_sort |
Berkutov, I.B. |
| title |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_short |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_fullStr |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full_unstemmed |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_sort |
overheating effect and hole-phonon interaction in sige heterostructures |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2008 |
| topic_facet |
Низкоразмерные и неупорядоченные системы |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117882 |
| citation_txt |
Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
| series |
Физика низких температур |
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AT berkutovib overheatingeffectandholephononinteractioninsigeheterostructures AT andrievskiivv overheatingeffectandholephononinteractioninsigeheterostructures AT komnikyuf overheatingeffectandholephononinteractioninsigeheterostructures AT myronovm overheatingeffectandholephononinteractioninsigeheterostructures AT mironovoa overheatingeffectandholephononinteractioninsigeheterostructures |
| first_indexed |
2023-10-18T20:30:47Z |
| last_indexed |
2023-10-18T20:30:47Z |
| _version_ |
1796150397343105024 |