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IR sensor readout devices with source input circuits

Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing...

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Main Authors: Sizov, F.F., Reva, V.P., Derkach, Yu.P., Kononenko, Yu.G., Golenkov, A.G., Korinets, S.V., Darchuk, S.D., Filenko, D.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117929
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spelling irk-123456789-1179292017-05-28T03:04:23Z IR sensor readout devices with source input circuits Sizov, F.F. Reva, V.P. Derkach, Yu.P. Kononenko, Yu.G. Golenkov, A.G. Korinets, S.V. Darchuk, S.D. Filenko, D.A. Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing switches attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon readout devices for 2x64 n⁺-p- or p⁺-n - linear arrays and n⁺-p- 2x4x128(144) time-delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD registers. The designed CCD readout devices are driven with four- or two-phase clocking pulses. 1999 Article IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 07.07.D, 42.79.P,Q; 85.30 http://dspace.nbuv.gov.ua/handle/123456789/117929 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing switches attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon readout devices for 2x64 n⁺-p- or p⁺-n - linear arrays and n⁺-p- 2x4x128(144) time-delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD registers. The designed CCD readout devices are driven with four- or two-phase clocking pulses.
format Article
author Sizov, F.F.
Reva, V.P.
Derkach, Yu.P.
Kononenko, Yu.G.
Golenkov, A.G.
Korinets, S.V.
Darchuk, S.D.
Filenko, D.A.
spellingShingle Sizov, F.F.
Reva, V.P.
Derkach, Yu.P.
Kononenko, Yu.G.
Golenkov, A.G.
Korinets, S.V.
Darchuk, S.D.
Filenko, D.A.
IR sensor readout devices with source input circuits
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sizov, F.F.
Reva, V.P.
Derkach, Yu.P.
Kononenko, Yu.G.
Golenkov, A.G.
Korinets, S.V.
Darchuk, S.D.
Filenko, D.A.
author_sort Sizov, F.F.
title IR sensor readout devices with source input circuits
title_short IR sensor readout devices with source input circuits
title_full IR sensor readout devices with source input circuits
title_fullStr IR sensor readout devices with source input circuits
title_full_unstemmed IR sensor readout devices with source input circuits
title_sort ir sensor readout devices with source input circuits
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/117929
citation_txt IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT golenkovag irsensorreadoutdeviceswithsourceinputcircuits
AT korinetssv irsensorreadoutdeviceswithsourceinputcircuits
AT darchuksd irsensorreadoutdeviceswithsourceinputcircuits
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first_indexed 2023-10-18T20:30:56Z
last_indexed 2023-10-18T20:30:56Z
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