Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals
Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal...
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| Дата: | 1999 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117935 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1179352017-05-28T03:04:07Z Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals Bogoboyashchiy, V.V. Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal heat treatment, while the first native acceptor level increases monotonically from 10 meV in the Hg-saturated crystal up to 15.4 meV in the Te-saturated one. The experimentally observed energy of the first level of the native acceptor in Te-saturated crystals (15.4 meV) is in a good agreement with the value 16 meV, obtained by calculation carried out in the framework of the effective mass approximation. The difference between the crystals, saturated by Hg or Te, has an essential effect for reverse dark current through a p-n-junction at T = 77 K. It should be taken into account when manufacturing the photodiodes. 1999 Article Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 72.20.M, 73.40 http://dspace.nbuv.gov.ua/handle/123456789/117935 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal heat treatment, while the first native acceptor level increases monotonically from 10 meV in the Hg-saturated crystal up to 15.4 meV in the Te-saturated one. The experimentally observed energy of the first level of the native acceptor in Te-saturated crystals (15.4 meV) is in a good agreement with the value 16 meV, obtained by calculation carried out in the framework of the effective mass approximation. The difference between the crystals, saturated by Hg or Te, has an essential effect for reverse dark current through a p-n-junction at T = 77 K. It should be taken into account when manufacturing the photodiodes. |
| format |
Article |
| author |
Bogoboyashchiy, V.V. |
| spellingShingle |
Bogoboyashchiy, V.V. Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bogoboyashchiy, V.V. |
| author_sort |
Bogoboyashchiy, V.V. |
| title |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_short |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_full |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_fullStr |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_full_unstemmed |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_sort |
effect of annealing on activation of native acceptors in narrow-gap p-hgcdte crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117935 |
| citation_txt |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:57Z |
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