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Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films

The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were resistors of rectangular form with the dimensions 400x40 µm² and had contact areas...

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Bibliographic Details
Main Authors: Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117936
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