Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films

• Дата: 1999
• Автори: Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/117936
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films / V.M. Mamikonova, F.D. Kasimov, G.P. Kemerchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 70-75. — Бібліогр.: 7 назв. — англ.

The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were resistors of rectangular form with the dimensions 400x40 µm² and had contact areas...