Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...

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Дата:	2003
Автори:	Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.
Формат:	Стаття
Мова:	English
Опубліковано:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:	Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/117941
Теги:	Додати тег Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	irk-123456789-117941
record_format	dspace
spelling	irk-123456789-1179412017-05-28T03:04:25Z Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics. 2003 Article Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 75.50.Pp; 75.75.+a; 85.80.Jm http://dspace.nbuv.gov.ua/handle/123456789/117941 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
format	Article
author	Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J.
spellingShingle	Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet	Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J.
author_sort	Figielski, T.
title	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_short	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_fullStr	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full_unstemmed	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_sort	magnetic point contact in ferromagnetic semiconductor (ga,mn)as
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	2003
url	http://dspace.nbuv.gov.ua/handle/123456789/117941
citation_txt	Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.
series	Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv	AT figielskit magneticpointcontactinferromagneticsemiconductorgamnas AT wosinskit magneticpointcontactinferromagneticsemiconductorgamnas AT morawskia magneticpointcontactinferromagneticsemiconductorgamnas AT pelyao magneticpointcontactinferromagneticsemiconductorgamnas AT makosaa magneticpointcontactinferromagneticsemiconductorgamnas AT dobrowolskiw magneticpointcontactinferromagneticsemiconductorgamnas AT wrobelj magneticpointcontactinferromagneticsemiconductorgamnas AT sadowskij magneticpointcontactinferromagneticsemiconductorgamnas AT jagielskij magneticpointcontactinferromagneticsemiconductorgamnas AT ratajczakj magneticpointcontactinferromagneticsemiconductorgamnas
first_indexed	2023-10-18T20:30:58Z
last_indexed	2023-10-18T20:30:58Z
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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

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