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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...

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Main Authors: Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117941
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spelling irk-123456789-1179412017-05-28T03:04:25Z Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics. 2003 Article Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 75.50.Pp; 75.75.+a; 85.80.Jm http://dspace.nbuv.gov.ua/handle/123456789/117941 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
format Article
author Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
spellingShingle Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
author_sort Figielski, T.
title Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_short Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_fullStr Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full_unstemmed Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_sort magnetic point contact in ferromagnetic semiconductor (ga,mn)as
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/117941
citation_txt Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT figielskit magneticpointcontactinferromagneticsemiconductorgamnas
AT wosinskit magneticpointcontactinferromagneticsemiconductorgamnas
AT morawskia magneticpointcontactinferromagneticsemiconductorgamnas
AT pelyao magneticpointcontactinferromagneticsemiconductorgamnas
AT makosaa magneticpointcontactinferromagneticsemiconductorgamnas
AT dobrowolskiw magneticpointcontactinferromagneticsemiconductorgamnas
AT wrobelj magneticpointcontactinferromagneticsemiconductorgamnas
AT sadowskij magneticpointcontactinferromagneticsemiconductorgamnas
AT jagielskij magneticpointcontactinferromagneticsemiconductorgamnas
AT ratajczakj magneticpointcontactinferromagneticsemiconductorgamnas
first_indexed 2023-10-18T20:30:58Z
last_indexed 2023-10-18T20:30:58Z
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