Electrical activity of misfit dislocations in GaAs-based heterostructures
Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level transient spectroscopy (DLTS). DLTS measurements, carried out with p-n junctio...
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| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117944 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical activity of misfit dislocations in GaAs-based heterostructures / T. Wosinski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 58-61. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1179442017-05-28T03:04:54Z Electrical activity of misfit dislocations in GaAs-based heterostructures Wosinski, T. Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level transient spectroscopy (DLTS). DLTS measurements, carried out with p-n junctions formed near the heterostructure interfaces, revealed one electron trap and one hole trap induced by the lattice mismatch. The electron trap has been attributed to electron states associated with threading dislocations in the ternary compound close to the interface, whereas the hole trap has been ascribed to misfit dislocations at the heterostructure interface. Detailed investigation of the dependence of DLTS-line amplitude and its shape on the filling time of the traps with charge carriers allowed us to specify the type of electronic states related to both traps. 2003 Article Electrical activity of misfit dislocations in GaAs-based heterostructures / T. Wosinski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 58-61. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 61.72.Lk; 68.55.Ln; 71.55.Eq; 73.20.Dx http://dspace.nbuv.gov.ua/handle/123456789/117944 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level transient spectroscopy (DLTS). DLTS measurements, carried out with p-n junctions formed near the heterostructure interfaces, revealed one electron trap and one hole trap induced by the lattice mismatch. The electron trap has been attributed to electron states associated with threading dislocations in the ternary compound close to the interface, whereas the hole trap has been ascribed to misfit dislocations at the heterostructure interface. Detailed investigation of the dependence of DLTS-line amplitude and its shape on the filling time of the traps with charge carriers allowed us to specify the type of electronic states related to both traps. |
| format |
Article |
| author |
Wosinski, T. |
| spellingShingle |
Wosinski, T. Electrical activity of misfit dislocations in GaAs-based heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Wosinski, T. |
| author_sort |
Wosinski, T. |
| title |
Electrical activity of misfit dislocations in GaAs-based heterostructures |
| title_short |
Electrical activity of misfit dislocations in GaAs-based heterostructures |
| title_full |
Electrical activity of misfit dislocations in GaAs-based heterostructures |
| title_fullStr |
Electrical activity of misfit dislocations in GaAs-based heterostructures |
| title_full_unstemmed |
Electrical activity of misfit dislocations in GaAs-based heterostructures |
| title_sort |
electrical activity of misfit dislocations in gaas-based heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117944 |
| citation_txt |
Electrical activity of misfit dislocations in GaAs-based heterostructures / T. Wosinski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 58-61. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:58Z |
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