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Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial...

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Bibliographic Details
Main Authors: Serdega, B.K., Venger, Ye.F., Nikitenko, Ye.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117956
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http://dspace.nbuv.gov.ua/handle/123456789/117956

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